The ATLASPix3.1 CMOS pixel sensor testbeam performance and serial powering characterisation

Ustuner, F. and Zanzottera, R. and Andreazza, A. and Dong, R. and Fox, H. and Gao, Y. and Gheewalla, P. and Masic, B. and Meng, L. and Peric, I. and Sabatini, F. (2025) The ATLASPix3.1 CMOS pixel sensor testbeam performance and serial powering characterisation. Journal of Instrumentation, 20 (02): C02036. ISSN 1748-0221

Full text not available from this repository.

Abstract

High-voltage CMOS (HV-CMOS) pixel technology is being considered for future Higgs factory experiments. The ATLASPix3.1 chip, with a pitch of 50 μm × 150 μm, fabricated using TSI 180 nm HV-CMOS technology, is a full reticle-size monolithic HV-CMOS sensor with shunt-low dropout (LDO) regulators that allow serial powering for multiple sensors. A beam test was conducted at DESY using 3–6 GeV electron beams, with chips operated in triggerless readout mode with zero suppression, demonstrating multi-chip capability. This was further evaluated with hadron beams, both with and without the built-in power regulators. This study presents the electrical characterisations of the shunt-LDO regulators for serial powering and test beam results of ATLASPix3.1 sensors.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Instrumentation
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3105
Subjects:
?? data acquisition circuitsdetector control systems (detector and experiment monitoring and slow-control systems, architecture, hardware, algorithms, databases)electronic detector readout concepts (solid-state)instrumentationmathematical physics ??
ID Code:
227652
Deposited By:
Deposited On:
19 Feb 2025 15:20
Refereed?:
Yes
Published?:
Published
Last Modified:
28 Feb 2025 04:01