Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

Cao, P. and Wang, T. and Peng, H. and Li, Z. and Zhuang, Q. and Zheng, W. (2024) Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber. Chinese Optics Letters, 22 (1): 012502.

[thumbnail of Mid-wavelength nBn InAsInAsSb photodetector with high operating temperature and low dark current20230908-qz]
Text (Mid-wavelength nBn InAsInAsSb photodetector with high operating temperature and low dark current20230908-qz)
Download (0B)
[thumbnail of Mid-wavelength nBn InAsInAsSb photodetector with high operating temperature and low dark current20230908-qz]
Text (Mid-wavelength nBn InAsInAsSb photodetector with high operating temperature and low dark current20230908-qz)
Download (0B)
[thumbnail of Mid-wavelength nBn InAsInAsSb photodetector with high operating temperature and low dark current20230908-qz]
Text (Mid-wavelength nBn InAsInAsSb photodetector with high operating temperature and low dark current20230908-qz)
Download (0B)
[thumbnail of Mid-wavelength_nBn_InAsInAsSb_photodetector_with_high_operating_temperature_and_low_dark_current20230908-qz]
Text (Mid-wavelength_nBn_InAsInAsSb_photodetector_with_high_operating_temperature_and_low_dark_current20230908-qz) - Accepted Version
Available under License Creative Commons Attribution.

Download (0B)
[thumbnail of Mid-wavelength_nBn_InAsInAsSb_photodetector_with_high_operating_temperature_and_low_dark_current20230908-qz]
Text (Mid-wavelength_nBn_InAsInAsSb_photodetector_with_high_operating_temperature_and_low_dark_current20230908-qz) - Accepted Version
Available under License Creative Commons Attribution.

Download (0B)
[thumbnail of Mid-wavelength_nBn_InAsInAsSb_photodetector_with_high_operating_temperature_and_low_dark_current20230908-qz]
Text (Mid-wavelength_nBn_InAsInAsSb_photodetector_with_high_operating_temperature_and_low_dark_current20230908-qz) - Accepted Version
Available under License Creative Commons Attribution.

Download (0B)
[thumbnail of Mid-wavelength_nBn_InAsInAsSb_photodetector_with_high_operating_temperature_and_low_dark_current20230908-qz]
Text (Mid-wavelength_nBn_InAsInAsSb_photodetector_with_high_operating_temperature_and_low_dark_current20230908-qz)
Mid-wavelength_nBn_InAsInAsSb_photodetector_with_high_operating_temperature_and_low_dark_current20230908-qz.pdf - Accepted Version
Available under License Creative Commons Attribution.

Download (1MB)

Abstract

In this paper, we demonstrate nBn InAs/InAsSb type II superlattice (T2SL) photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared (MWIR) detection. To improve operating temperature and suppress dark current, a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO2 layer. These result in ultralow dark current density of 6.28 × 10-6 A=cm2 and 0.31 A=cm2 under -600 mV at 97 K and 297 K, respectively, which is lower than most reported InAs/InAsSb-based MWIR photodetectors. Corresponding resistance area product values of 3.20 × 104 Ω cm2 and 1.32Ω cm2 were obtained at 97 K and 297 K. A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5 μm and a peak detectivity of 2.1 × 109 cm Hz1=2=W were obtained at a high operating temperature up to 237 K.

Item Type:
Journal Article
Journal or Publication Title:
Chinese Optics Letters
Uncontrolled Keywords:
Research Output Funding/no_not_funded
Subjects:
?? inassb superlatticeinfrared detectioninfrared photodetectormid-wavelength infraredmid-wavelength infrared photodetectoroperating temperatureresistance-area productstype iidark currentsno - not fundedno ??
ID Code:
219823
Deposited By:
Deposited On:
16 May 2024 13:24
Refereed?:
Yes
Published?:
Published
Last Modified:
04 Jun 2024 00:56