Hexagonal Boron Nitride Thick Film Grown on a Sapphire Substrate via Low-Pressure Chemical Vapor Deposition

Zhu, Zhifu and Zhang, Zhongming and Wang, Shaotang and Zou, Jijun and Gan, Yong and Yang, Ruibin and Zhang, Yang and Long, Bingxu (2023) Hexagonal Boron Nitride Thick Film Grown on a Sapphire Substrate via Low-Pressure Chemical Vapor Deposition. Crystal Growth and Design. ISSN 1528-7483

Text (h-BN thick film grown on a sapphire substrates via LPCVD)
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Abstract

Hexagonal boron nitride (h-BN) with a certain thickness has wide applications in semiconductor electronic devices. In this study, the relationship between the amount of ammonia borane and the thickness of h-BN films was investigated via low-pressure chemical vapor deposition (LPCVD) on a noncatalytic c-plane Al2O3 substrate. Through various characterization methods, the grown film was confirmed to be h-BN. The effect of the precursor mass on the growth thickness of the h-BN film was studied, and it was found that the precursor mass significantly affected the growth rate of the h-BN film. The results from SEM show that the amount of ammonia borane is 2000 mg and a 1.295-μm h-BN film is obtained. It will provide an experimental reference for the growth of thicker h-BN materials to prepare high-efficiency neutron detectors for radiation detection.