DC bias circuit effects in CV measurements.

Chilingarov, Alexandre (2006) DC bias circuit effects in CV measurements. In: 9th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders, 2006-10-162006-10-18.

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Abstract

A DC bias circuit is a necessary part of CV measurement set-up. The effects of this circuit on the measured parameters are simulated and compared with experimental data. Reconstruction of the actual DUT characteristics is considered.

Item Type: Contribution to Conference (Speech)
Journal or Publication Title: 9th RD50 Workshop on Radiation hard semiconductor devices for very high luminosity colliders
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 19914
Deposited By: Dr Alexandre Chilingarov
Deposited On: 19 Nov 2008 14:15
Refereed?: No
Published?: Published
Last Modified: 18 Aug 2019 23:44
URI: https://eprints.lancs.ac.uk/id/eprint/19914

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