Comparison of charge collection efficiency of segmented silicon detectors made with FZ and MCz p-type silicon substrates

Casse, G. and Affolder, A. and Allport, P.P. and Chilingarov, A. and Greenall, A. and Hara, K. and Hommels, B. and Kohriki, T. and Ikegami, Y. and Meguro, T. and Terada, S. and Unno, Y. (2008) Comparison of charge collection efficiency of segmented silicon detectors made with FZ and MCz p-type silicon substrates. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 591 (1). pp. 178-180. ISSN 0168-9002

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Abstract

High-resistivity p-type silicon has emerged as one of the most promising materials for the finely segmented detectors to be used in particle physics experiments where high levels of radiation damage are expected. Beside the standard high-purity float-zone (FZ) silicon, relatively high-resistivity magnetic Czocharlski (MCz) is now available from industry. This material has been proposed as possibly more radiation hard than the standard FZ. This work shows a comparison of these substrate materials in terms of charge collection efficiency measurements performed with 40 MHz analogue electronics, before and after irradiation.

Item Type: Journal Article
Journal or Publication Title: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 19235
Deposited By: Dr Alexandre Chilingarov
Deposited On: 05 Nov 2008 13:22
Refereed?: Yes
Published?: Published
Last Modified: 22 Jun 2019 01:58
URI: https://eprints.lancs.ac.uk/id/eprint/19235

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