Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing

Hanks, Laura and Mamic, Katarina and Klos, Krzysztof and Bainbridge, Andrew and Fletcher, Joshua and Gilder, Lindsay and Tedstone, Lucy and Castano, Fernando and Marshall, Andrew (2023) Quasi-planar InGaAsSb p-B-n photodiodes for spectroscopic sensing. Optics Express, 31 (9). pp. 14358-14366. ISSN 1094-4087

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Abstract

An InGaAsSb p-B-n structure has been designed and characterised for zero bias low power detection applications. Devices were grown by molecular beam epitaxy and fabricated into quasi-planar photodiodes with a 2.25 μm cut-off wavelength. Maximum responsivity was measured to be 1.05 A/W at 2.0 μm, achieved at zero bias. D* of 9.4×1010 Jones was determined from room temperature spectra of noise power measurements with calculated D* remaining >1×1010 Jones up to 380 K. With a view to simple miniaturised detection and measurement of low concentration biomarkers, optical powers down to 40 pW were detected, without temperature stabilisation or phase-sensitive detection, indicating the photodiode’s potential.