Power dependence of the photocurrent lineshape in a semiconductor quantum dot

Russell, A. and Falko, Vladimir (2007) Power dependence of the photocurrent lineshape in a semiconductor quantum dot. Applied Physics Letters, 91 (19). ISSN 1077-3118

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We propose a kinetic theory to describe the power dependence of the photocurrent lineshape in optically pumped quantum dots at low temperatures in both zero and finite magnetic fields. We show that there is a crossover power P-c, determined by the electron and hole tunneling rates, where the photocurrent no longer reflects the exciton lifetime. For P > P-c, we show that the photocurrent saturates due to the slow hole escape rate, whereas the linewidth increases with power. We analyze the spin-doublet lineshape in high magnetic fields and determine to what measure it reflects the degree of circular polarization of incident light.

Item Type: Journal Article
Journal or Publication Title: Applied Physics Letters
Additional Information: Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 91, 193107 (2007) and may be found at http://link.aip.org/link/?APPLAB/91/193107/1
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100/3101
Departments: Faculty of Science and Technology > Physics
ID Code: 18679
Deposited By: ep_ss_importer
Deposited On: 29 Oct 2008 10:20
Refereed?: Yes
Published?: Published
Last Modified: 10 Jun 2019 18:13
URI: https://eprints.lancs.ac.uk/id/eprint/18679

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