Tekin, Serdar B. (2018) Electrical characterization of HfO<sub>2</sub> based resistive RAM devices having different bottom electrode metallizations. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) :. UNSPECIFIED.
Full text not available from this repository.Abstract
HfO 2 based resistive RAM devices as the important candidates of future embedded non-volatile memory technology were investigated using state of art physical and electrical characterization methods. Memory stacks used for measurements, named MARS, having four different bottom electrode materials fabricated by CEA-LETI and ASM cooperation. The effects of bottom electrode metallization on Forming, switching and capacitive characteristics were studied and most efficient combinations were determined among these structures. It was observed that devices having atomic layer deposited (ALD) bottom electrode have some capacitive properties. Also TiN and TiWN bottom electrodes indicate promising switching characteristics and low operation voltages among others.