Evidence for the Potential Barrier Height Reduction in Metal-Oxide-Metal Tunnel Junctions due to the Interface Dependent Metal-Induced-Gap-States

Hosik, Lee and Jung, Hyuntae and Kim, Yongmin and Jung, Kyooho and Im, Hyunsik and Pashkin, Yuri and Astafiev, O. and Tsai, J. S. and Miyamoto, Yoshiyuki (2009) Evidence for the Potential Barrier Height Reduction in Metal-Oxide-Metal Tunnel Junctions due to the Interface Dependent Metal-Induced-Gap-States. American Physical Society, 2009 APS March Meeting, March 16-20, 2009.

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Abstract

We have performed transport measurements on Al and Nb based metal-oxide-metal tunnel junctions with an AlOx tunnel barrier and found a strong dependence of the effective potential barrier height on the oxide-metal interface properties. Our estimations of the barrier height based on a phenomenological Simmons' model are consistent with the values obtained from the first-principle calculations. The calculations clearly show that the barrier height is strongly affected by the formation of metal induced gap states originating from the hybridization between metallic bands and Al2O3 conduction band. These findings are important for nanoelectronic devices containing tunnel junctions with a thin insulating layer.

Item Type:
Journal Article
Journal or Publication Title:
American Physical Society, 2009 APS March Meeting, March 16-20, 2009
ID Code:
177986
Deposited By:
Deposited On:
24 Oct 2022 10:15
Refereed?:
No
Published?:
Published
Last Modified:
22 Nov 2022 11:59