Graded composition and doping p-i-n AlxGa1-xAs/GaAs detector for unbiased voltage operation

Zhu, Zhifu and Zou, Jijun and Sun, Zhijia and Huang, He and Xiu, Qinglei and Zhang, Zhongming and Gan, Yong and Guo, Chenxian and Wang, Shaotang and Yue, Xiuping and Kong, Guoli (2022) Graded composition and doping p-i-n AlxGa1-xAs/GaAs detector for unbiased voltage operation. Nuclear Science and Techniques, 33.

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Abstract

p-i-n AlxGa1-xAs/GaAs detectors with graded compositions and graded doping were grown and prepared. From the current–voltage and capacitance–voltage measurement results, the devices had good p–n junction diode characteristics, and the electric field strength under an unbiased voltage was 1.7 9 105 Vcm-1. The full width at half maximum and charge collection efficiency of the detectors obtained from energy spectrum measurements of 5.48-MeV alpha particles were 3.04 and approximately 93%, respectively. In this study, we created the most advanced and promising state-of-the-art unbiased detector reported to date.

Item Type:
Journal Article
Journal or Publication Title:
Nuclear Science and Techniques
Subjects:
ID Code:
173647
Deposited By:
Deposited On:
29 Jul 2022 15:35
Refereed?:
Yes
Published?:
Published
Last Modified:
29 Jul 2022 15:35