Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition

Zhu, Zhifu and Wang, Shaotang and Zou, Jijun and Huang, He and Sun, Zhijia and Xiu, Qinglei and Zhang, Zhongming and Yue, Xiuping and Zhang, Yang and Qu, Jinhui and Gan, Yong (2022) Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition. Chinese Physics B, 31 (8): 086103. ISSN 1674-1056

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Abstract

Hexagonal boron nitride (h-BN) films are synthesized by dual temperature zone low-pressure chemical vapor deposition (LPCVD) through using a single ammonia borane precursor on non-catalytic c-plane Al2O3 substrates. The grown films are confirmed to be h-BN films by various characterization methods. Meanwhile, the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied. It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different. The growth rates of the h-BN thin films show their decreasing trends with the rearward position, while the crystal quality is improved. This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD.