Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition

Zhu, Zhifu and Wang, Shaotang and Zou, Jijun and Huang, He and Sun, Zhijia and Xiu, Qinglei and Zhang, Zhongming and Yue, Xiuping and Zhang, Yang and Qu, Jinhui and Gan, Yong (2022) Synthesis of hexagonal boron nitride films by dual temperature zone low-pressure chemical vapor deposition. Chinese Physics B, 31 (8). ISSN 1674-1056

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Abstract

Hexagonal boron nitride (h-BN) films are synthesized by dual temperature zone low-pressure chemical vapor deposition (LPCVD) through using a single ammonia borane precursor on non-catalytic c-plane Al2O3 substrates. The grown films are confirmed to be h-BN films by various characterization methods. Meanwhile, the growth rates and crystal quality of h-BN films at different positions in the dual temperature zone are studied. It is found that the growth rates and crystal quality of the h-BN films at different positions on the substrate are significantly different. The growth rates of the h-BN thin films show their decreasing trends with the rearward position, while the crystal quality is improved. This work provides an experimental basis for the preparation of large area wafer thick h-BN films by LPCVD.

Item Type:
Journal Article
Journal or Publication Title:
Chinese Physics B
Additional Information:
This is an author-created, un-copyedited version of an article published in Chinese Physics B. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi: 10.1088/1674-1056/ac657d
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100
Subjects:
?? PHYSICS AND ASTRONOMY(ALL) ??
ID Code:
173242
Deposited By:
Deposited On:
25 Jul 2022 10:45
Refereed?:
Yes
Published?:
Published
Last Modified:
17 Sep 2023 03:16