Simulations of resonant tunnelling through InAs/AlSb heterostructures for ULTRARAM™ memory

Lane, Dominic and Hayne, Manus (2021) Simulations of resonant tunnelling through InAs/AlSb heterostructures for ULTRARAM™ memory. Journal of Physics D: Applied Physics, 54 (35). ISSN 0022-3727

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Abstract

ULTRARAM™ is a III–V semiconductor memory technology which allows non-volatile logic switching at ultra-low energy (per unit area). This is achieved by exploiting triple-barrier resonant tunnelling (TBRT) through a series of InAs/AlSb heterojunctions specifically engineered for this purpose. Electrons tunnelling through the barriers at low bias are trapped in a floating gate, in which the presence or absence of charge defines the memory logic. Here, we report detailed non-equilibrium Green's functions simulations of the InAs/AlSb TBRT heterostructure, which is the principal source of ULTRARAM™'s extraordinary performance benefits. The effects of variations to the heterostructure layer thickness are investigated for performance optimization, and for assessing growth and process tolerances for commercial implementation on 12'' Si wafers. Trade-offs between power, speed, logic disturbance and data retention time are identified. Importantly, most one monolayer alterations to the tunnelling region show the required characteristics for ULTRARAM™ memory operation, thus some tolerance in any future commercial fabrication process is identified.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Physics D: Applied Physics
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
156430
Deposited By:
Deposited On:
23 Jun 2021 09:16
Refereed?:
Yes
Published?:
Published
Last Modified:
06 Oct 2021 08:19