Films Stoichiometry Effects on the Electronic Transport Properties of Solution-Processed Yttrium Doped Indium–Zinc Oxide Crystalline Semiconductors for Thin Film Transistor Applications

Afouxenidis, D. and Halcovitch, N.R. and Milne, W.I. and Nathan, A. and Adamopoulos, G. (2020) Films Stoichiometry Effects on the Electronic Transport Properties of Solution-Processed Yttrium Doped Indium–Zinc Oxide Crystalline Semiconductors for Thin Film Transistor Applications. Advanced Electronic Materials, 6 (4). ISSN 2199-160X

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Abstract

Spray-coated crystalline InZnOx-based semiconductors are investigated as a function of [In3+]:[Zn2+] and their performance as TFTs semiconducting channels. More precisely, it is demonstrated that optical, structural, and electron transport properties show a high degree of sensitivity to the films' stoichiometry; that is, the [In3+]:[Zn2+] atomic ratio that equally determines the amorphous or crystalline structure of the film. Yttrium co-doping of InZnOx with [In3+]:[Zn2+] atomic ratio of 6:4 shows that the YInZnOx structure and the key TFT parameters can further be engineered and improved in terms of the on-to-off current modulation ratio and, most importantly, the field effect mobility. It is finally demonstrated that the latter is in excess of 52 cm(2) V-1 s(-1) by combining crystalline YInZnOx and spray-coated MgO dielectrics. These results identify spray-coated crystalline YInZnOx as a viable TFT semiconducting channel material with respect to enhanced electrical performance and processing requirements in terms of simplicity and cost.

Item Type:
Journal Article
Journal or Publication Title:
Advanced Electronic Materials
Subjects:
ID Code:
149348
Deposited By:
Deposited On:
24 Nov 2020 12:50
Refereed?:
Yes
Published?:
Published
Last Modified:
27 Jul 2021 05:20