Extension of resonant cavity-enhanced photodetection into the MWIR and LWIR ranges using a Ga-free type-II strained-layer superlattice

Letka, V. and Bainbridge, A. and Craig, A.P. and Al-Saymari, F. and Marshall, A.R.J. and (SPIE), The Society of Photo-Optical Instrumentation Engineers (2020) Extension of resonant cavity-enhanced photodetection into the MWIR and LWIR ranges using a Ga-free type-II strained-layer superlattice. In: Infrared Technology and Applications XLVI, 2020-04-272020-05-08, Online.

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Resonant cavity-enhanced photodetectors (RCE PDs) present a compelling alternative to broadband detection techniques in the field of gas detection and environmental sensing, due to the distinctive narrow-band absorption fingerprints of gases such as N2O (at 4.5 μm) or CO (4.6 μm). This characteristic aligns well with the operational mode of an RCE PD, whose VCSEL-like architecture results in a tuneable narrow-band spectral response with a significantly enhanced quantum efficiency. Additionally, unlike broadband detectors, RCE PDs are not subject to the broadband BLIP limit due to their high spectral selectivity, while the substantially reduced absorber volume offers commensurately reduced Auger and generation-recombination dark current densities. In this work, we present efforts to extend the operability of these structures beyond 4.0 μm wavelength by employing the type-II InAs/InAsSb superlattice as the absorber material. The tuneable bandgap of this structure allows to achieve and demonstrate a MWIR RCE PD with a highly thermally stable resonant response at ∼ 4.45 μm, a Q factor of 85-95, full-width-at-half-maximum of ∼ 50 nm and a peak quantum efficiency of 84% at 240 K - features which are promising for detection of gases such as CO and N2O. The broadband BLIP is also achieved at 180 K, a result which could potentially enable thermoelectrically cooled operation in the future. Finally, thanks to the inherent bandgap tunability of the InAs/InAsSb superlattice, extension of resonant response into the LWIR range is achievable with relatively straightforward changes to the already existing RCE PD structure. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

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Infrared Technology and Applications XLVI
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Conference code: 161404 Export Date: 30 July 2020 CODEN: PSISD Correspondence Address: Letka, V.; Physics Department, Lancaster UniversityUnited Kingdom; email: v.letka@lancaster.ac.uk References: Unlu, M., Strite, S., Resonant cavity enhanced photonic devices (1995) J. Appl. Phys, 78, pp. 607-639; Coblentz Society, I., Evaluated infrared reference spectra NIST Chemistry WebBook, NIST Standard Reference Database Number, 69. , Gaithersburg MD, National Institute of Standards and Technology, retrieved 15/05/2020; Green, A., Gevaux, D., Roberts, C., Stavrinou, P., Phillips, C., 3 m InAs resonant-cavity-enhanced photodetector (2003) Semicond. Sci. Technol, 18, pp. 964-967; Craig, A., Al-Saymari, F., Jain, M., Bainbridge, A., Savich, G., Golding, T., Krier, A., Marshall, A., Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared (2019) Appl. Phys. Lett, 114, p. 151107; Rogalski, A., Inas(1-x)sb(x) infrared detectors (1989) Progress in Quantum Electronics, 13, pp. 191-231; Sarney, W.L., Svensson, S.P., Xu, Y., Donetsky, D., Belenky, G., Bulk InAsSb with 0.1 eV bandgap on GaAs (2017) Journal of Applied Physics, 122, p. 025705; Canedy, L., Bewley, W., Merritt, C., Kim, C., Kim, M., Warren, M., Jackson, E., Meyer, J., Resonant-cavity infrared detector with five-quantum-well absorber and 34% external quantum efficiency at 4 m (2019) Opt. Express, 27 (3), pp. 3771-3781; Kim, H.S., Cellek, O.O., Lin, Z.-Y., He, Z.-Y., Zhao, X.-H., Liu, S., Li, Z.Y.-H.H., Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices (2012) Appl. Phys. Lett, 101, p. 16114; Hoang, A.M., Chen, G., Chevallier, R., Haddadi, A., Razeghi, M., High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection (2014) Appl. Phys. Lettk, 104, p. 251105; (2019) Inventory of U.S. Greenhouse Gas Emissions and Sinks: 1990-2017, , United States Environmental Protection Agency Washington; Gordon, L.R.C.H.E.A.I.E., The hitran2016 molecular spectroscopic database (2017) Journal of Quantitative Spectroscopy and Radiative Transfer, 203, pp. 3-69; Vurgaftman, I.M.J.R.-N.L., Band parameters for III-V compound semiconductors and their alloys (2001) Journal of Applied Physics, 89, p. 5815; Hoglund, L., Ting, D., Khoshakhlagh, A., Soibel, A., Hill, C., Fisher, A., Keo, S., Gunapala, S., Influence of radiative and non-radiative recombination on the minority carrier lifetime in midwave infrared InAs/InAsSb superlattices (2013) Appl. Phys. Lett, 103, p. 221908; Hoglund, L., Ting, D., Soibel, A., Fisher, A., Khoshakhlagh, A., Hill, C.B.L., Keo, S., Gunapala, S., Influence of carrier concentration on the minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices (2015) Infrared Phys. Technol, 70, pp. 62-65; Steenbergen, E., Connelly, B., Metcalfe, G., Shen, H., Wraback, M., Lubyshev, D., Qiu, Y., Zhang, Y., Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb (2011) Appl. Phys. Lett, 99, p. 251110; Klipstein, P., Klin, O., Grossman, S., Snapi, N., Yaakobovitz, B., Brumer, M., Lukomsky, I., Weiss, E., MWIR InAsSb XBn detectors for high operating temperatures (2010) Proc. SPIE, 7660, p. 76602Y; Rogalski, A., Kopytko, M., Martyniuk, P., (2018) Antimonide-based Infrared Detectors: A New Perspective, , Bellingham: SPIE Press; Pristera, F., Halik, M., Castelli, A., Fredericks, W., Analysis of explosives using infrared spectroscopy (1960) Analytical Chemistry, 32 (4), pp. 495-508
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