Nitrogen doped multilayer photo catalytically reduced graphene oxide floating gate:Al/PMMA/NrGO/SiO2/p–Si/Au based hybrid gate stack for non volatile memory applications

Soni, Mahesh and Soni, Ajay and Sharma, Satinder K. (2017) Nitrogen doped multilayer photo catalytically reduced graphene oxide floating gate:Al/PMMA/NrGO/SiO2/p–Si/Au based hybrid gate stack for non volatile memory applications. Organic Electronics, 51. pp. 48-53. ISSN 1566-1199

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Abstract

Photo catalytically assisted, multi–layer nitrogen doped reduced graphene oxide (ML–NrGO) is investigated as a promising charge storage layer in Al/PMMA/NrGO/SiO2/p–Si/Au structure. A considerable memory window (ΔW) of ∼3.3 V at ± 7 V sweep voltage and long data retention upto ∼ 105 s is demonstrated as an encouraging candidature for emerging memory hierarchies. The clockwise hysteresis supports the hole charge trapping mechanism in the NrGO based structure. The ML–NrGO memory devices provide the rapid programming, saturation of the program transients, store more data at less cost and reduced ballistic transport in the plane perpendicular to NrGO. The facile, solution processable, cost effective device processing and stable retention of the fabricated ML–NrGO based Al/PMMA/NrGO/SiO2/p–Si/Au flash memory structures proves to be a potential alternative for existing EEPROM based embedded applications and also for commercial scale production of flash memory based on flexible organic electronics.

Item Type:
Journal Article
Journal or Publication Title:
Organic Electronics
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
145042
Deposited By:
Deposited On:
21 Jul 2020 14:25
Refereed?:
Yes
Published?:
Published
Last Modified:
24 Sep 2020 05:15