Low voltage & controlled switching of MoS2-GO resistive layers based ReRAM for non-volatile memory applications

Choudhary, Sumit and Soni, Mahesh and Sharma, Satinder K. (2019) Low voltage & controlled switching of MoS2-GO resistive layers based ReRAM for non-volatile memory applications. Semiconductor Science and Technology, 34 (8). ISSN 0268-1242

Full text not available from this repository.

Abstract

Emerging information technology and data deluge foster the unprecedented demands of higher chip density, clocking speed, data storage and lower power dissipation for on-chip non-volatile memories (NVMs). Here, two types of metal-insulator-metal (MIM) based NVM structures were fabricated and demonstrated involving controlled functionalization of molybdenum disulfide (MoS2) and graphene oxide (GO) nanocomposite as a resistive switching layer. The first type of device constitutes Aluminum (Al) top and bottom electrode resulting in the Al/MoS2-GO/Al structure. While the second type of device uses Al top electrode and Indium Tin Oxide (ITO) bottom electrode resulting in Al/MoS2-GO/ITO. The current-voltage (I-V) characteristics for fabricated Al/MoS2-GO/Al and Al/MoS2-GO/ITO MIM structures exhibited considerable I-ON/I-OFF ratio of similar to 10(2) (SET and RESET state at 0.5 V and -0.4 V) and similar to 10(1) (SET and RESET state at 0.3 V and -1V), respectively. The I-V characteristics for Al/MoS2-GO/Al MIM structure showed low voltage switching, substantial memory retention similar to 10(4) s and endurance for up to 25 cycles. The low voltage and controlled switching operation for Al/MoS2-GO/Al MIM structures may be attributed to the presence of a large number of oxygen vacancies, defects in MoS2-GO, promoting enhanced charge hopping via interfacial oxide at MoS2-GO/Al interface as compared to MoS2-GO/ITO.

Item Type:
Journal Article
Journal or Publication Title:
Semiconductor Science and Technology
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
144940
Deposited By:
Deposited On:
21 Jul 2020 15:15
Refereed?:
Yes
Published?:
Published
Last Modified:
24 Sep 2020 05:14