Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

El Abbassi, M. and Perrin, M.L. and Barin, G.B. and Sangtarash, S. and Overbeck, J. and Braun, O. and Lambert, C.J. and Sun, Q. and Prechtl, T. and Narita, A. and Müllen, K. and Ruffieux, P. and Sadeghi, H. and Fasel, R. and Calame, M. (2020) Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors. ACS Nano, 14 (5). pp. 5754-5762. ISSN 1936-086X

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Abstract

Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by their small size (

Item Type:
Journal Article
Journal or Publication Title:
ACS Nano
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2200
Subjects:
ID Code:
144518
Deposited By:
Deposited On:
05 Jun 2020 15:20
Refereed?:
Yes
Published?:
Published
Last Modified:
18 Jul 2020 09:07