Simulation of Si nanowire quantum-dot devices for authentication

Carrillo-Nunez, H. and Wang, C. and Asenov, A. and Young, R. and Georgiev, V. (2019) Simulation of Si nanowire quantum-dot devices for authentication. In: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2019-04-012019-04-03.

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Abstract

This paper shows quantum mechanical simulations of quantum-dots (QDs) embedded within Si nanowires. To capture the effect of statistical sources of variability, we simulated 60 wires with differing numbers and positions of dopants, not only in the quantum dot but also at the source and the drain regions also. Our work shows that the specific number of dopants and their positions give rise to unique current-voltage characteristics, providing unique signatures for use as the basis of physical unclonable functions (PUFs). Adoption of hardware security devices for authentication is on the rise; the technology proposed here delivers a practical means to extract fingerprints from quantum confined systems that could provide robust security to silicon electronics. © 2019 IEEE.

Item Type:
Contribution to Conference (Paper)
Journal or Publication Title:
2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
Additional Information:
Export Date: 29 April 2020
Subjects:
ID Code:
143701
Deposited By:
Deposited On:
15 Jun 2021 14:00
Refereed?:
Yes
Published?:
Published
Last Modified:
06 Oct 2021 09:12