Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

Di Paola, D.M. and Lu, Q. and Repiso, E. and Kesaria, M. and Makarovsky, O. and Krier, A. and Patanè, A. (2020) Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode. Applied Physics Letters, 116 (14). ISSN 0003-6951

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Abstract

Light emitting diodes (LEDs) in the mid-infrared (MIR) spectral range require material systems with tailored optical absorption and emission at wavelengths lambda > 2 mu m. Here, we report on MIR LEDs based on In(AsN)/(InAl)As resonant tunneling diodes (RTDs). The N-atoms lead to the formation of localized deep levels in the In(AsN) quantum well (QW) layer of the RTD. This has two main effects on the electroluminescence (EL) emission. By electrical injection of carriers into the N-related levels, EL emission is achieved at wavelengths significantly larger than for the QW emission (lambda similar to 3 mu m), extending the output of the diode to lambda similar to 5 mu m. Furthermore, for applied voltages well below the flatband condition of the diode, EL emission is observed at energies much larger than those supplied by the applied voltage and/or thermal energy, with an energy gain Delta E>0.2eV at room temperature. We attribute this upconversion luminescence to an Auger-like recombination process.

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Additional Information:
Copyright 2020 American Institute of Physics. The following article appeared in Applied Physics Letters, 116, 2020 and may be found at http://dx.doi.org/10.1063/5.0002407 This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
143685
Deposited By:
Deposited On:
06 May 2020 15:05
Refereed?:
Yes
Published?:
Published
Last Modified:
06 Jul 2020 01:09