# A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1-xAs distributed Bragg reflector

Wilson, Tom and Hodgson, Peter and Robson, Alexander and Jackson, Charles and Grew, Benjamin and Hayne, Manus (2020) A detailed comparison of measured and simulated optical properties of a short-period GaAs/AlxGa1-xAs distributed Bragg reflector. Semiconductor Science and Technology, 35 (5). ISSN 0268-1242

Text (Wilson Semicond Sci Tech 35 055003 (2020))
Wilson_Semicond_Sci_Tech_35_055003_2020_.pdf - Published Version

Text (Wilson_Simulated_Measured_Optical_Properties_GaAs_AlGaAs_DBRs)
Wilson_Simulated_Measured_Optical_Properties_GaAs_AlGaAs_DBRs.pdf - Accepted Version

## Abstract

A 6-period GaAs/Al$_{0.9}$Ga$_{0.1}$As distributed Bragg reflector (DBR) has been grown and its optical properties have been both measured and simulated. Incremental improvements were made to the simulation, allowing it to account for internal consistency error, incorrect layer thicknesses, and absorption due to substrate doping to improve simulation accuracy. A compositional depth profile using secondary-ion mass spectrometry (SIMS) has been taken and shows that the Al fraction averages 88.0$\pm0.3\%$. It is found that the amplitude of the transmission is significantly affected by absorption in the n-doped GaAs substrate, even though the energy of the transmitted light is well below the GaAs band gap. The wavelength of the features on the transmission spectrum are mostly affected by DBR layer thicknesses. On the other hand, the transmission spectrum is found to be relatively tolerant to changes to Al fraction.

Item Type:
Journal Article
Journal or Publication Title:
Semiconductor Science and Technology
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
Departments:
ID Code:
142696
Deposited By:
Deposited On:
25 Mar 2020 17:10
Refereed?:
Yes
Published?:
Published