Neutron-induced soft errors in advanced flash memories

Cellere, G. and Gerardin, S. and Bagatin, M. and Paccagnella, A. and Visconti, A. and Bonanomi, M. and Beltrami, S. and Roche, P. and Gasiot, G. and Sørensen, R. Harboe and Virtanen, A. and Frost, C. and Fuochi, P. and Andreani, C. and Gorini, G. and Pietropaolo, A. and Platt, S. (2008) Neutron-induced soft errors in advanced flash memories. In: 2008 IEEE International Electron Devices Meeting, IEDM 2008. Technical Digest - International Electron Devices Meeting, IEDM . IEEE, USA. ISBN 9781424423781

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Abstract

Atmospheric neutrons are a known source of Soft Errors (SE), in static and dynamic CMOS memories. This paper shows for the first time that atmospheric neutrons are able to induce SE in Flash memories as well. Detailed experimental results provide an explanation linking the Floating Gate (FG) cell SE rate to the physics of the neutron-matter interaction. The neutron sensitivity is expected to increase with the number of bits per cell and the reduction of the feature size, but the SE issue is within the limit of current ECC capabilities and will remain so in the foreseeable future.

Item Type:
Contribution in Book/Report/Proceedings
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2500/2505
Subjects:
ID Code:
141288
Deposited By:
Deposited On:
11 Feb 2020 10:55
Refereed?:
No
Published?:
Published
Last Modified:
05 Aug 2020 10:24