Badcock, T. J. and Hayne, M. and Hopkinson, M. and Jantsch, W and Liu, H. Y. and Moshchalkov, V V and Mowbray, D. J. and Nabavi, E. and Nuytten, T. and Schaffler, F and Steer, M. J. (2007) Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots. In: Physics of Semiconductors, Pts A and B. American Institute of Physics, pp. 951-952. ISBN 9780735403970
Full text not available from this repository.Abstract
It is demonstrated that capping InAs self-assembled quantum dots with a thin GaAsSb layer allows the emission to be extended beyond 1.5 um at room temperature. This behaviour is attributed to the formation of a type-II system for Sb composition above -15%. Magneto-optical spectroscopy suggests that the type-II excitons remain compact and it is postulated that strain modulation of the GaAsSb layer results in hole localization immediately above the quantum dots.