Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots

Badcock, T. J. and Hayne, M. and Hopkinson, M. and Jantsch, W and Liu, H. Y. and Moshchalkov, V V and Mowbray, D. J. and Nabavi, E. and Nuytten, T. and Schaffler, F and Steer, M. J. (2007) Electronic structure of long wavelength (> 1.3 mu m) GaAsSb-capped InAs quantum dots. In: Physics of Semiconductors, Pts A and B. American Institute of Physics, pp. 951-952. ISBN 9780735403970

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Abstract

It is demonstrated that capping InAs self-assembled quantum dots with a thin GaAsSb layer allows the emission to be extended beyond 1.5 um at room temperature. This behaviour is attributed to the formation of a type-II system for Sb composition above -15%. Magneto-optical spectroscopy suggests that the type-II excitons remain compact and it is postulated that strain modulation of the GaAsSb layer results in hole localization immediately above the quantum dots.

Item Type:
Contribution in Book/Report/Proceedings
ID Code:
138469
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Deposited On:
04 Nov 2019 09:35
Refereed?:
No
Published?:
Published
Last Modified:
01 Jan 2020 11:01