Charge separation and temperature-induced carrier migration in Ga1-xInxNyAs1-y multiple quantum wells

Bansal, Bhavtosh and Hayne, M. and Hopkinson, M. and Liu, H. Y. and Moshchalkov, V V and Nuytten, T. (2011) Charge separation and temperature-induced carrier migration in Ga1-xInxNyAs1-y multiple quantum wells. Physical review B, 84. ISSN 1098-0121

Full text not available from this repository.

Abstract

We have investigated the photoluminescence (PL) of two carefully selected dilute nitride Ga1-xInxNyAs1-y multiple quantum well structures in magnetic fields up to 50 T as a function of temperature and excitation power. The observation of a nonmonotonic dependence of the PL energy on temperature indicates that localized states dominate the luminescence at low temperature, while magneto-PL experiments give new insights into the nature of the localization. We find that the low-temperature spatial distribution of carriers in the quantum well is different for electrons and holes because they are captured by different disorder-induced complexes that are spatially separated. A study of the thermalization of the carriers toward free states leads to the determination of the free-exciton wave-function extent in these systems and enables an assessment of the localization potentials induced by inhomogeneity in the quantum well.

Item Type:
Journal Article
Journal or Publication Title:
Physical review B
ID Code:
138466
Deposited By:
Deposited On:
04 Nov 2019 10:05
Refereed?:
Yes
Published?:
Published
Last Modified:
30 Apr 2020 00:46