Modelling radiation damage to pixel sensors in the ATLAS detector

Collaboration, ATLAS and Barton, A.E. and Bertram, I.A. and Borissov, G. and Bouhova-Thacker, E.V. and Fox, H. and Henderson, R.C.W. and Jones, R.W.L. and Kartvelishvili, V. and Long, R.E. and Love, P.A. and Muenstermann, D. and Parker, A.J. and Smizanska, M. and Tee, A.S. and Walder, J. and Wharton, A.M. and Whitmore, B.W. (2019) Modelling radiation damage to pixel sensors in the ATLAS detector. Journal of Instrumentation, 14 (6). ISSN 1748-0221

Full text not available from this repository.

Abstract

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 1015 1 MeV neq/cm2, while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (≤ 1015 1 MeV neq/cm2).

Item Type: Journal Article
Journal or Publication Title: Journal of Instrumentation
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/2600/2610
Subjects:
Departments: Faculty of Science and Technology > Physics
Faculty of Science and Technology > Engineering
ID Code: 136367
Deposited By: ep_importer_pure
Deposited On: 27 Aug 2019 15:05
Refereed?: Yes
Published?: Published
Last Modified: 18 Feb 2020 04:38
URI: https://eprints.lancs.ac.uk/id/eprint/136367

Actions (login required)

View Item View Item