Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range

Repiso Menendez, Eva and Broderick, Christopher and de la Mata, Maria and Arkani, Reza and Lu, Qi and Marshall, Andrew and Molina, Sergio and O'Reilly, Eoin and Carrington, Peter and Krier, Anthony (2019) Optical properties of metamorphic type-I InAs1-xSbx/AlyIn1-yAs quantum wells grown on GaAs for the mid-infrared spectral range. Journal of Physics D: Applied Physics, 52. ISSN 0022-3727

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Abstract

We analyse the optical properties of InAs1-xSbx/AlyIn1-yAs quantum wells (QWs) grown by molecular beam epitaxy on relaxed AlyIn1-yAs metamorphic buffer layers (MBLs) using GaAs substrates. The use of AlyIn1-yAs MBLs allows for the growth of QWs having large type-I band offsets, and emission wavelengths > 3 µm. Photoluminescence (PL) measurements for QWs having Sb compositions up to x = 10% demonstrate strong room temperature emission up to 3.4 µm, as well as enhancement of the PL intensity with increasing wavelength. To quantify the trends in the measured PL we calculate the QW spontaneous emission, using a theoretical model based on an 8- band k٠p Hamiltonian. The theoretical calculations, which are in good agreement with experiment, identify that the observed enhancement in PL intensity with increasing wavelength is associated with the impact of compressive strain on the QW valence band structure, which reduces the band edge density of states making more carriers available to undergo radiative recombination at fixed carrier density. Our results highlight the potential of type-I InAs1-xSbx/AlyIn1-yAs metamorphic QWs to address several limitations associated with existing heterostructures operating in the mid-infrared, establishing these novel heterostructures as a suitable platform for the development of light-emitting diodes and diode lasers.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Physics D: Applied Physics
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
135939
Deposited By:
Deposited On:
05 Aug 2019 12:55
Refereed?:
Yes
Published?:
Published
Last Modified:
26 Sep 2020 06:08