Silicon nanobridge as a high quality mechanical resonator

Presnov, D. E. and Dorofeev, A. A. and Bozhev, I. V. and Trifonov, A. S. and Kafanov, S. G. and Pashkin, Yu A. and Krupenin, V. A. (2019) Silicon nanobridge as a high quality mechanical resonator. Proceedings of SPIE, 11022. ISSN 0277-786X

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Abstract

The paper presents details of the fabricating technology of nanoscale mechanical resonators based on suspended silicon nanowires. The structures were made from silicon on insulator material, the thickness of the upper layer of silicon is 110 nm, the thickness of silicon oxide is 200 nm. Fabrication process contains standard CMOS compatible technologies only: Electron lithography with positive resist, reactive ion and liquid etching, electron beam deposition of thin films. The presented structures can be used as sensors of mass, displacement, acceleration, pressure with extremely high sensitivity.

Item Type:
Journal Article
Journal or Publication Title:
Proceedings of SPIE
Additional Information:
D. E. Presnov, A. A. Dorofeev, I. V. Bozhev, A. S. Trifonov, S. G. Kafanov, Yu. A. Pashkin, V. A. Krupenin, "Silicon nanobridge as a high quality mechanical resonator," Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220V (15 March 2019) Copyright notice format: Copyright 2019 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. DOI abstract link format: http://dx.doi.org/10.1117/12.2521034
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2200/2208
Subjects:
ID Code:
134549
Deposited By:
Deposited On:
22 Jun 2019 09:11
Refereed?:
Yes
Published?:
Published
Last Modified:
25 Nov 2020 06:23