Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications

Orchard, Jonathan R. and Woodhead, Chris and Shutts, Samuel and Wu, Jiang and Sobiesierski, Angela and Young, Rob J. and Beanland, Richard and Liu, Huiyun and Smowton, Peter M. and Mowbray, David J. and Huffaker, Diana L. and Eisele, Holger and Dick, Kimberly A. (2016) Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications. In: Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIII. SPIE. ISBN 9781628419931

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Abstract

Three InAs quantum dot (QD) samples with dislocation filter layers (DFLs) are grown on Si substrates with and without in-situ annealing. Comparison is made to a similar structure grown on a GaAs substrate. The three Si grown samples have different dislocation densities in their active region as revealed by structural studies. By determining the integrated emission as a function of laser power it is possible to determine the power dependence of the radiative efficiency and compare this across the four samples. The radiative efficiency increases with decreasing dislocation density; this also results in a decrease in the temperature quenching of the PL. A laser structures grown on Si and implementing the same optimum DFL and annealing procedure exhibits a greater than 3 fold reduction in threshold current as well as a two fold increase in slope efficiency in comparison to a device in which no annealing is applied. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Item Type: Contribution in Book/Report/Proceedings
Departments: Faculty of Science and Technology > Physics
ID Code: 134343
Deposited By: ep_importer_pure
Deposited On: 22 Jun 2019 01:03
Refereed?: Yes
Published?: Published
Last Modified: 30 Sep 2019 12:32
URI: https://eprints.lancs.ac.uk/id/eprint/134343

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