Simulating electronically driven structural changes in silicon with two-temperature molecular dynamics

Darkins, Robert and Ma, Pui-Wai and Murphy, Samuel and Duffy, Dorothy (2018) Simulating electronically driven structural changes in silicon with two-temperature molecular dynamics. Physical Review B: Condensed Matter and Materials Physics, 98 (2). ISSN 1098-0121

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Abstract

Radiation can drive the electrons in a material out of thermal equilibrium with the nuclei, producing hot, transient electronic states that modify the interatomic potential energy surface. We present a rigorous formulation of two-temperature molecular dynamics that can accommodate these electronic effects in the form of electronic-temperature-dependent force fields. Such a force field is presented for silicon, which has been constructed to reproduce the ab initio-derived thermodynamics of the diamond phase for electronic temperatures up to 2.5eV, as well as the structural dynamics observed experimentally under nonequilibrium conditions in the femtosecond regime. This includes nonthermal melting on a subpicosecond timescale to a liquidlike state for electronic temperatures above ∼1eV. The methods presented in this paper lay a rigorous foundation for the large-scale atomistic modeling of electronically driven structural dynamics with potential applications spanning the entire domain of radiation damage.

Item Type:
Journal Article
Journal or Publication Title:
Physical Review B: Condensed Matter and Materials Physics
Additional Information:
© 2018 American Physical Society
ID Code:
132517
Deposited By:
Deposited On:
24 Oct 2019 13:55
Refereed?:
Yes
Published?:
Published
Last Modified:
24 Sep 2020 04:37