Topological edge states in high-temperature superconductiving FeSe/SrTiO 3 films with Te substitution

Chen, L. and Liu, H. and Jiang, C. and Shi, C. and Wang, D. and Cui, G. and Li, X. and Zhuang, Qiandong (2019) Topological edge states in high-temperature superconductiving FeSe/SrTiO 3 films with Te substitution. Scientific Reports, 9 (1): 4154. ISSN 2045-2322

Abstract

Using first principles theory, we investigated the behavior of the one-dimensional (1D) topological edge states of high temperature superconductiviing FeSe/SrTiO3 films with Te atoms substitution to Se atoms in the bottom (top) layer in single-layer FeSe, as a function of strain. It was discovered that the 1D topological edge states are present in single-unit-cell FeSe film on SrTiO3, but are absent when more than 50% Se atoms are replaced by Te atoms. Stress induced displacive phase transformation exists in FeSe/SrTiO3 film when Te atoms substitute Se atoms in the bottom (top) layer in single-layer FeSe under 3% strain respectively. The 1D topological edge states are present under 3% (1.8%) strain in FeSe/SrTiO3 films with Te substitution Se in the bottom (top) layer in single-layer FeSe, even up to 5%, respectively. This indicates that the bonding angle of Se-Fe-Se (Te) and the distance of Te (or Se) atoms to the Fe plane are correlated with the topological edge states. Our findings provide an effective interface system that provides both superconducting and topological states, opening a new route for realizing 2D topological superconductors with proximity effect.