Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 angstrom materials

Craig, A.P. and Jain, M. and Meriggi, L. and Cann, T. and Niblett, A. and Collins, X. and Marshall, A.R.J. (2019) Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 angstrom materials. Applied Physics Letters, 114 (5). ISSN 0003-6951

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Abstract

Extended short-wave infrared (SWIR) avalanche photodiodes based on III-V quaternary alloys were grown on GaSb. An InGaAsSb absorber allowed for cut-off wavelengths of 2.2 mu m and 2.75 mu m, at 77 K and 300 K, respectively. A multiplication layer of AlGaAsSb with Al = 0.9 mole fraction was used, a material recently characterized by our group, allowing for a breakdown voltage of less than 15 V. Linear and 2D arrays were fabricated using BCl3 dry and HF wet-chemical etching, and dielectric passivation layers were tested. These results indicate that extended SWIR single photon detectors can be developed. (C) 2019 Author(s).

Item Type:
Journal Article
Journal or Publication Title:
Applied Physics Letters
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3101
Subjects:
ID Code:
131540
Deposited By:
Deposited On:
01 Mar 2019 11:50
Refereed?:
Yes
Published?:
Published
Last Modified:
28 Mar 2020 05:56