Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions

Pashkin, Yuri A. and Nakamura, Yasunobu and Tsai, Jaw-Shen (1999) Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions. Japanese Journal of Applied Physics, 38 (Part 1). pp. 2466-2469. ISSN 0021-4922

Abstract

We have measured resistively coupled single electron transistors under two bias conditions: asymmetric and symmetric. We observed a characteristic Coulomb blockade pattern whose shape is significantly different for the two cases. Our simulations based on the orthodox theory of single-electron tunneling are in good qualitative agreement with the experimental data.