Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions

Pashkin, Yuri A. and Nakamura, Yasunobu and Tsai, Jaw-Shen (1999) Coulomb Blockade in Resistively Coupled Single-Electron Transistor: Dependence on Bias Conditions. Japanese Journal of Applied Physics, 38 (Part 1). pp. 2466-2469. ISSN 0021-4922

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Abstract

We have measured resistively coupled single electron transistors under two bias conditions: asymmetric and symmetric. We observed a characteristic Coulomb blockade pattern whose shape is significantly different for the two cases. Our simulations based on the orthodox theory of single-electron tunneling are in good qualitative agreement with the experimental data.

Item Type:
Journal Article
Journal or Publication Title:
Japanese Journal of Applied Physics
ID Code:
130682
Deposited By:
Deposited On:
22 Jan 2019 11:40
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 11:46