2e periodic modulation of the I-V curve of a current-biased superconducting transistor

Pashkin, Yu.A. and Haviland, D.B. and Kuzmin, L.S. and Chen, C.D. and Delsing, P. and Claeson, T. (1994) 2e periodic modulation of the I-V curve of a current-biased superconducting transistor. Physica B: Condensed Matter, 194-19. pp. 1049-1050. ISSN 0921-4526

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Abstract

We have made an experimental study of the tunnelling through a current-biased superconducting single electron transistor at temperatures down to 40 mK. The current-biased transistor consisted of two ultrasmall tunnel junctions connected in series, biased through two high-Ohmic resistors (length 10 μm) located very close to the tunnel junctions. The two-probe measurement of the current-voltage characteristic has shown a periodic modulation with a gate voltage, having two separate fundamental periods in gate charge, ΔQ1=e and ΔQ2=2e, as well as higher harmonics of these two. We have found that the amplitude of the 2e-component was enhanced as superconductivity of the electrodes was suppressed with an external magnetic field. These results are discussed within the context of a parity model.

Item Type:
Journal Article
Journal or Publication Title:
Physica B: Condensed Matter
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
ID Code:
130678
Deposited By:
Deposited On:
22 Jan 2019 11:15
Refereed?:
Yes
Published?:
Published
Last Modified:
03 Jun 2020 05:43