Mid-infrared GaInSb/AlGaInSb quantum well laser diodes

Nash, G. R. and Przeslak, S. J.B. and Smith, S. J. and De Valicourt, G. and Andreev, A. D. and Carrington, P. J. and Yin, M. and Krier, A. and Coomber, S. D. and Buckle, L. and Emeny, M. T. and Ashley, T. (2009) Mid-infrared GaInSb/AlGaInSb quantum well laser diodes. In: International Quantum Electronics Conference, IQEC 2009. Optical Society of America (OSA), USA. ISBN 9781557528698

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Abstract

Electroluminescence from GaInSb/AlGaInSb quantum well (QW) diode lasers, grown on GaAs, has been investigated as a function of strain in the QWs, with lasing occurring at ~3.3μm at 200K with 1.1% strain in the QW.

Item Type:
Contribution in Book/Report/Proceedings
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100/3107
Subjects:
ID Code:
129745
Deposited By:
Deposited On:
22 Jun 2019 00:54
Refereed?:
Yes
Published?:
Published
Last Modified:
30 Aug 2020 06:56