Nanoscale elastic imaging of aluminum/low-k dielectric interconnect structures

Shekhawat, G. S. and Kolosov, O. V. and Briggs, G. A.D. and Shaffer, E. O. and Martin, S. and Geer, R. E. (2000) Nanoscale elastic imaging of aluminum/low-k dielectric interconnect structures. Materials Research Society Symposium-Proceedings, 612. D171-D177. ISSN 0272-9172

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Abstract

A new characterization tool based on ultrasonic force microscopy (UFM) has been developed to image the nanometer scale mechanical properties of aluminum/low-k polymer damascene integrated circuit (IC) test structures. Aluminum and polymer regions are differentiated on the basis of elastic modulus with a spatial resolution ≤10 nm. This technique reveals a reactive-ion etch (RIE)-induced hardening of the low-k polymer that is manifested in the final IC test structure by a region of increased hardness at the aluminum/polymer interface. The ability to characterize nanometer scale mechanical properties of materials used for IC back-end-of-line (BEOL) manufacture offers new opportunities for metrological reliability evaluation of low-k integration processes.

Item Type:
Journal Article
Journal or Publication Title:
Materials Research Society Symposium-Proceedings
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2200/2210
Subjects:
ID Code:
129229
Deposited By:
Deposited On:
30 Nov 2018 10:26
Refereed?:
Yes
Published?:
Published
Last Modified:
23 Jan 2020 04:56