Gate-tunable spatial modulation of localized plasmon resonances

Arcangeli, Andrea and Rossella, Francesco and Tomadin, Andrea and Xu, Jihua and Ercolani, Daniele and Sorba, Lucia and Beltram, Fabio and Tredicucci, Alessandro and Polini, Marco and Roddaro, Stefano (2016) Gate-tunable spatial modulation of localized plasmon resonances. Nano Letters, 16 (9). pp. 5688-5693. ISSN 1530-6984

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Abstract

We demonstrate localization and field-effect spatial control of the plasmon resonance in semiconductor nanostructures, using scattering-type scanning near-field optical microscopy in the mid-infrared region. We adopt InAs nanowires embedding a graded doping profile to modulate the free carrier density along the axial direction. Our near-field measurements have a spatial resolution of 20 nm and demonstrate the presence of a local resonant feature whose position can be controlled by a back-gate bias voltage. In the present implementation, field-effect induces a modulation of the free carrier density profile yielding a spatial shift of the plasmon resonance of the order of 100 nm. We discuss the relevance of our electrically tunable nanoplasmonic architectures in view of innovative optoelectronic devices concepts.

Item Type: Journal Article
Journal or Publication Title: Nano Letters
Uncontrolled Keywords: /dk/atira/pure/subjectarea/asjc/3100/3104
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 129050
Deposited By: ep_importer_pure
Deposited On: 22 Nov 2018 14:58
Refereed?: Yes
Published?: Published
Last Modified: 15 Oct 2019 05:05
URI: https://eprints.lancs.ac.uk/id/eprint/129050

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