Cornet, C. and Hayne, M. and Schliwa, A. and Doré, F. and Labbé, C. and Folliot, H. and Even, J. and Bimberg, D. and Moshchalkov, V. V. and Loualiche, S. (2007) Theory and experiment of InAs/InP quantum dots:from calculations to laser emission. AIP Conference Proceedings, 893. pp. 779-780. ISSN 0094-243X
Full text not available from this repository.Abstract
We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k·p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots in a InGaAsP quaternary alloy matrix. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications.