Theory and experiment of InAs/InP quantum dots:from calculations to laser emission

Cornet, C. and Hayne, M. and Schliwa, A. and Doré, F. and Labbé, C. and Folliot, H. and Even, J. and Bimberg, D. and Moshchalkov, V. V. and Loualiche, S. (2007) Theory and experiment of InAs/InP quantum dots:from calculations to laser emission. AIP Conference Proceedings, 893. pp. 779-780. ISSN 0094-243X

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Abstract

We report a brief overview of recent research developments on InAs/InP quantum dots (QDs). Eight-band k·p calculations are performed on single InAs/InP QDs, and the impact of substrate orientation ((311)B or (100)) on electronic and optical properties is studied. It is then demonstrated that high QDs density can be reached on such a system, leading to lateral coupling between dots in a InGaAsP quaternary alloy matrix. Calculations and (magnetophoto-) (photo-) (electro-) luminescence experiments are used to demonstrate that the lateral coupling leads to miniband effects, and to a better charge carrier redistribution between QDs for laser applications.

Item Type:
Journal Article
Journal or Publication Title:
AIP Conference Proceedings
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/3100
Subjects:
ID Code:
128311
Deposited By:
Deposited On:
17 Oct 2018 11:00
Refereed?:
Yes
Published?:
Published
Last Modified:
01 Jan 2020 11:36