Open-circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure

Montesdeoca Cardenes, Denise and Carrington, Peter James and Marko, I. P. and Wagener, Magnus C. and Sweeney, S. J. and Krier, Anthony (2018) Open-circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure. Solar Energy Materials and Solar Cells, 187 (1). pp. 227-232. ISSN 0927-0248

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Abstract

Hydrostatic pressure can be used as a powerful diagnostic tool to enable the study of lattice dynamics, defects, impurities and recombination processes in a variety of semiconductor materials and devices. Here we report on intermediate band GaAs solar cells containing GaSb quantum rings which exhibit a 15% increase in open-circuit voltage under application of 8 kbar hydrostatic pressure at room temperature. The pressure coefficients of the respective optical transitions for the GaSb quantum rings, the wetting layer and the GaAs bulk, were each measured to be ~10.5±0.5 meV/kbar. A comparison of the pressure induced and temperature induced bandgap changes highlights the significance of the thermal energy of carriers in intermediate band solar cells.

Item Type:
Journal Article
Journal or Publication Title:
Solar Energy Materials and Solar Cells
Additional Information:
This is the author’s version of a work that was accepted for publication in Solar Energy Materials and Solar Cells. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solar Energy Materials and Solar Cells, 187, 2018 DOI: 10.1016/j.solmat.2018.07.028
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2100/2105
Subjects:
ID Code:
127073
Deposited By:
Deposited On:
23 Aug 2018 14:26
Refereed?:
Yes
Published?:
Published
Last Modified:
19 Sep 2020 05:22