Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells

Wagener, Magnus C. and Montesdeoca Cardenes, Denise and Lu, Qi and Marshall, Andrew Robert Julian and Krier, Anthony and Botha, Johannes Reinhardt and Carrington, Peter James (2019) Hole capture and emission dynamics of type-II GaSb/GaAs quantum ring solar cells. Solar Energy Materials and Solar Cells, 189. pp. 233-238. ISSN 0927-0248

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The capture cross-section, intersubband optical cross-section and non-radiative emission rates related to localized hole states are obtained for p-i-n solar cells containing GaSb/GaAs quantum rings embedded within the i-region of the device. The technique developed uses the intraband photoemission current to probe the charge state of the nanostructures during two-color excitation. Analysis of the excitation power dependence revealed a non-radiative hole capture lifetime of 12 ns under low excitation conditions, with high injection leading to the saturation of the hole occupancy within the quantum-rings. The decay characteristics of the optical hole emission current has also been exploited to determine the spectral and temperature dependence of the radiative and non-radiative hole escape mechanisms from the quantum-rings.

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Journal Article
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Solar Energy Materials and Solar Cells
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Deposited On:
16 Aug 2018 08:42
Last Modified:
22 Nov 2022 06:13