Charge collection in irradiated HV-CMOS detectors

Hiti, B. and Affolder, A. and Arndt, K. and Bates, R. and Benoit, M. and Bello, F. Di and Blue, A. and Bortoletto, D. and Buckland, M. and Buttar, C. and Caragiulo, P. and Das, D. and Doering, D. and Dopke, J. and Dragone, A. and Ehrler, F. and Fadeyev, V. and Fedorko, W. and Galloway, Z. and Gay, C. and Grabas, H. and Gregor, I.M. and Grenier, P. and Grillo, A. and Han, Y. and Hoeferkamp, M. and Hommels, L.B.A. and Huffman, T. and John, J. and Kanisauskas, K. and Kenney, C. and Kramberger, G. and Liang, Z. and Mandić, I. and Maneuski, D. and Martinez-Mckinney, F. and McMahon, S. and Meng, L. and Mikuž, M. and Muenstermann, D. and Nickerson, R. and Peric, I. and Phillips, P. and Plackett, R. and Rubbo, F. and Ruckman, L. and Segal, J. and Seidel, S. and Seiden, A. and Shipsey, I. and Song, W. and Stanitzki, M. and Su, D. and Tamma, C. and Turchetta, R. and Vigani, L. and Volk, J. and Wang, R. and Warren, M. and Wilson, F. and Worm, S. and Xiu, Q. and Zhang, J. and Zhu, H. (2019) Charge collection in irradiated HV-CMOS detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 924. pp. 214-218. ISSN 0168-9002

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Abstract

Active silicon detectors built on p-type substrate are a promising technological solution for large area silicon trackers such as those at the High Luminosity LHC, but the radiation hardness of this novel approach has to be evaluated. Active n-in-p strip detector prototypes CHESS2 for ATLAS with different substrate resistivities in the range of 20–1000 Ωcm were irradiated with neutrons and protons up to a fluence of 2×1015neqcm−2 and 3.6×1015neqcm−2. Charge collection in passive test structures on the chip was evaluated using Edge-TCT and minimum ionising electrons from 90Sr. Results were used to assess radiation hardness of the detector in the given fluence range and to determine parameters of initial acceptor removal in different substrates.