Gate-defined quantum confinement in InSe-based Van der Waals heterostructures

Hamer, Matthew and Tóvári, Endre and Mengjian, Zhu and Thompson, Michael Dermot and Mayorov, Alexander and Prance, Jonathan Robert and Lee, Yongjin and Haley, Richard Peter and Kudrynskyi, Zakhar and Patane, A. and Terry, Daniel and Kovalyuk, Zakhar and Ensslin, Klaus and Kretinin, Andrey and Geim, Andre and Gorbachev, Roman (2018) Gate-defined quantum confinement in InSe-based Van der Waals heterostructures. Nano Letters, 18 (6). p. 3950. ISSN 1530-6984

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Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

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Journal Article
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Nano Letters
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This document is the Accepted Manuscript version of a Published Work that appeared in final form in [Journal Title], copyright © American Chemical Society after peer review and technical editing by the publisher.To access the final edited and published work see
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12 Jul 2018 10:32
Last Modified:
11 May 2022 05:59