Role of propagating ionisation fronts in semiconductor generation of sub-ps THz radiation

Jamison, S.P. and Ersfeld, B. and Jaroszynski, D.A. (2004) Role of propagating ionisation fronts in semiconductor generation of sub-ps THz radiation. Current Applied Physics, 4 (2-4). pp. 217-220.

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Abstract

Observations of a directional asymmetry in the sub-ps THz radiation generated from ultrafast excitation of biased GaAs are presented. This asymmetry is inconsistent with the long standing and widely accepted surface-layer current-surge description of the THz emission process. A model based on propagating carrier excitation fronts during spectral-hole-burning is proposed to explain these observations. This model introduces new roles for the semiconductor optical and carrier transport properties in determining the efficiency of the THz generation process.

Item Type: Journal Article
Journal or Publication Title: Current Applied Physics
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 125947
Deposited By: ep_importer_pure
Deposited On: 18 Jun 2018 09:08
Refereed?: Yes
Published?: Published
Last Modified: 01 Jan 2020 11:24
URI: https://eprints.lancs.ac.uk/id/eprint/125947

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