Localized interlayer complexes in heterobilayer transition metal dichalcogenides

Danovich, M. and Ruiz-Tijerina, D. A. and Hunt, R. J. and Szyniszewski, M. and Drummond, N. D. and Fal'ko, V. I. (2018) Localized interlayer complexes in heterobilayer transition metal dichalcogenides. Physical review B, 97. ISSN 1098-0121

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Abstract

We present theoretical results for the radiative rates and doping-dependent photoluminescence spectrum of interlayer excitonic complexes localized by donor impurities in MoSe2/WSe2 twisted heterobilayers, supported by quantum Monte Carlo calculations of binding energies and wave-function overlap integrals. For closely aligned layers, radiative decay is made possible by the momentum spread of the localized complexes' wave functions, resulting in radiative rates of a few μs−1. For strongly misaligned layers, the short-range interaction between the carriers and impurity provides a finite radiative rate with a strong asymptotic twist angle dependence ∝θ−8. Finally, phonon-assisted recombination is considered, with emission of optical phonons in both layers resulting in additional, weaker emission lines, redshifted by the phonon energy.

Item Type:
Journal Article
Journal or Publication Title:
Physical review B
ID Code:
125726
Deposited By:
Deposited On:
02 Jul 2018 07:56
Refereed?:
Yes
Published?:
Published
Last Modified:
26 May 2020 06:51