Radiation hardness studies of AMS HV-CMOS 350nm prototype chip HVStripV1

Muenstermann, Daniel Matthias Alfred (2017) Radiation hardness studies of AMS HV-CMOS 350nm prototype chip HVStripV1. Journal of Instrumentation, 12 (2). ISSN 1748-0221

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Abstract

CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. There was also a notable increase in noise levels from 85 e− to 386 e− and from 75 e− to 277 e− for the corresponding pixels.

Item Type:
Journal Article
Journal or Publication Title:
Journal of Instrumentation
Additional Information:
© CERN 2017 published under the terms of the Creative Commons Attribution 3.0 License by IOP Publishing Ltd and Sissa Medialab srl. Any further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation and DOI.
Uncontrolled Keywords:
/dk/atira/pure/subjectarea/asjc/2600/2610
Subjects:
ID Code:
124031
Deposited By:
Deposited On:
12 Mar 2018 16:44
Refereed?:
Yes
Published?:
Published
Last Modified:
23 Sep 2020 04:08