Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures.

Bozsoki, Peter and Hoyer, Walter and Kira, Mackillo and Varga, Imre and Thomas, Peter and Koch, Stephan W. and Schomerus, Henning (2009) Analytical analysis of single-photon correlations emitted by disordered semiconductor heterostructures. Journal of Materials Science: Materials in Electronics, 20 (Supple). pp. 23-29. ISSN 0957-4522

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Abstract

In a recent publication [Phys. Rev. Lett. 97, 227402 (2006), cond-mat/0611411], it has been demonstrated numerically that a long-range disorder potential in semiconductor quantum wells can be reconstructed reliably via single-photon interferometry of spontaneously emitted light. In the present paper, a simplified analytical model of independent two-level systems is presented in order to study the reconstruction procedure in more detail. With the help of this model, the measured photon correlations can be calculated analytically and the influence of parameters such as the disorder length scale, the wavelength of the used light, or the spotsize can be investigated systematically. Furthermore, the relation between the proposed angle-resolved single-photon correlations and the disorder potential can be understood and the measured signal is expected to be closely related to the characteristic strength and length scale of the disorder.

Item Type: Journal Article
Journal or Publication Title: Journal of Materials Science: Materials in Electronics
Additional Information: The original publication is available at www.springerlink.com
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 11187
Deposited By: Dr Henning Schomerus
Deposited On: 05 Aug 2008 08:44
Refereed?: Yes
Published?: Published
Last Modified: 19 Aug 2019 23:32
URI: https://eprints.lancs.ac.uk/id/eprint/11187

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