Rashba spin-splitting in narrow gap III-V semiconductor quantum wells

Stanley, J. P. and Pattinson, N. and Lambert, C. J. and Jefferson, J. H. (2004) Rashba spin-splitting in narrow gap III-V semiconductor quantum wells. Physica E: Low-dimensional Systems and Nanostructures, 20 (3-4). pp. 433-435. ISSN 1386-9477

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Abstract

Using Kane's 8-band k (.) p theory and the envelope function approximation we derive a tight binding Hamiltonian for III-V semiconductor quantum well structures, which accurately models band structure and spin-orbit coupling. By applying a potential difference across the well we have calculated the Rashba spin-splitting in the lowest conduction subband. For identical well widths the Rashba splitting in InSb is shown to be approximately twice that of InAs and, in all cases, passes through a weak maximum with increasing quasimomentum. (C) 2003 Elsevier B.V. All rights reserved.

Item Type: Journal Article
Journal or Publication Title: Physica E: Low-dimensional Systems and Nanostructures
Uncontrolled Keywords: /dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 10455
Deposited By: Users 810 not found.
Deposited On: 15 Jul 2008 10:57
Refereed?: Yes
Published?: Published
Last Modified: 22 Jun 2019 01:30
URI: https://eprints.lancs.ac.uk/id/eprint/10455

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