Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy

Krier, A and Huang, X L (2002) Electroluminescence from InAsSb quantum dot light emitting diodes grown by liquid phase epitaxy. In: Physics and Simulation of Optoelectronic Devices X. SPIE-INT SOC OPTICAL ENGINEERING, SAN JOSE, pp. 70-78. ISBN 0-8194-4385-9

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Abstract

Electroluminescence is reported for the first time from InAs0.75Sb0.25 quantum dot light emitting diodes. The quantum dots were grown from the liquid phase at 590 C on an InAs (100) substrate and embedded within the undoped active region of an InAs homojunction pin diode. At 4 K and 250 mA injection current, three transitions were identified, centred at 4.01, 3.80 and 3.63 mum, associated with the s, p and d states of the confined holes inside the quantum dot. Each of the transitions exhibits a blue shift with increasing injection current, but the electroluminescence results indicate the presence of a phonon bottleneck in these devices. The quantum dot electroluminescence was observed to persist up to room temperature.

Item Type:
Contribution in Book/Report/Proceedings
Uncontrolled Keywords:
/dk/atira/pure/researchoutput/libraryofcongress/qc
Subjects:
?? PHYSICSQC PHYSICS ??
ID Code:
56597
Deposited By:
Deposited On:
09 Aug 2012 11:54
Refereed?:
Yes
Published?:
Published
Last Modified:
16 Sep 2023 02:59