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Analytic model for the spatial and spectral resolution of pixellated semiconducting detectors of high-energy photons

Kororezov, Alexander G. and Wigmore, J. Keith and Owens, A. and Den Hartog, R. and Peacock, A. (2005) Analytic model for the spatial and spectral resolution of pixellated semiconducting detectors of high-energy photons. Journal of Applied Physics, 97 (7). 074502. ISSN 1089-7550

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Abstract

We report the development of a general analytic method for describing the responsivity and resolution for a pixellated semiconductor detector structure in terms of device and material properties. The method allows both drift and diffusive transport to be modelled, for which previously only Monte Carlo techniques have been available. We obtain a general solution, and show specific results for an array of square pixels, illustrating the device constraints required to optimize spatial and spectral resolution.

Item Type: Article
Journal or Publication Title: Journal of Applied Physics
Uncontrolled Keywords: semiconductor materials ; semiconductor counters ; semiconductor device models ; numerical analysis ; diffusion
Subjects: Q Science > QC Physics
Departments: Faculty of Science and Technology > Physics
ID Code: 9398
Deposited By: Ms Margaret Calder
Deposited On: 06 Jun 2008 14:58
Refereed?: Yes
Published?: Published
Last Modified: 26 Jul 2012 18:36
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/9398

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