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Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors

Durrani, Zahid A. K. and Jones, Mervyn E. and Wang, Chen and Liu, Dixi and Griffiths, Jonathan (2017) Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors. Nanotechnology, 28 (12). ISSN 0957-4484

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Abstract

Single nanometre scale quantum dots (QDs) have significant potential for many 'beyond CMOS' nanoelectronics and quantum computation applications. The fabrication and measurement of few nanometre silicon point-contact QD single-electron transistors are reported, which both operate at room temperature (RT) and are fabricated using standard processes. By combining thin silicon-on-insulator wafers, specific device geometry, and controlled oxidation, <10 nm nanoscale point-contact channels are defined. In this limit of the point-contact approach, ultra-small, few nanometre scale QDs are formed, enabling RT measurement of the full QD characteristics, including excited states to be made. A remarkably large QD electron addition energy ~0.8 eV, and a quantum confinement energy ~0.3 eV, are observed, implying a QD only ~1.6 nm in size. In measurements of 19 RT devices, the extracted QD radius lies within a narrow band, from 0.8 to 2.35 nm, emphasising the single-nanometre scale of the QDs. These results demonstrate that with careful control, 'beyond CMOS' RT QD transistors can be produced using current 'conventional' semiconductor device fabrication techniques.

Item Type: Journal Article
Journal or Publication Title: Nanotechnology
Uncontrolled Keywords: single electron transistor ; quantum dot ; nanodevices ; room temperature single electron effects
Subjects:
Departments: Faculty of Science and Technology > Physics
ID Code: 89202
Deposited By: ep_importer_pure
Deposited On: 14 Dec 2017 13:48
Refereed?: Yes
Published?: Published
Last Modified: 18 Sep 2018 06:07
Identification Number:
URI: http://eprints.lancs.ac.uk/id/eprint/89202

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