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Innovative patterning method for modifying few-layer MoS2 device geometries

J. Urbanos, F. and Black, Andrés and Bernardo Gavito, Ramon and Rodriguez-Osorio, Manuel and Casado, Santiago and Granados, Daniel (2017) Innovative patterning method for modifying few-layer MoS2 device geometries. Proceedings of SPIE, 10354. 103540G. ISSN 0277-786X

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    Abstract

    When mechanically exfoliated two-dimensional (2D) materials are used for device applications, their properties strongly depend on the geometry and number of layers present in the flake. In general, these properties cannot be modified once a device has been fabricated out of an exfoliated flake. In this work we present a novel nano-patterning method for 2D material based devices, Pulsed eBeam Gas Assisted Patterning (PEBGAP), that allows us to fine tune their geometry once the device fabrication steps have been completed.

    Item Type: Journal Article
    Journal or Publication Title: Proceedings of SPIE
    Additional Information: Fernando Jiménez Urbanos, Andrés Black, Ramón Bernardo-Gavito, Manuel R. Osorio, Santiago Casado, Daniel Granados, "Innovative patterning method for modifying few-layer MoS2 device geometries", Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 103540G (31 August 2017); doi: 10.1117/12.2272702; http://dx.doi.org/10.1117/12.2272702 Copyright 2017 Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, or modification of the contents of the publication are prohibited.
    Subjects:
    Departments: Faculty of Science and Technology > Physics
    ID Code: 88345
    Deposited By: ep_importer_pure
    Deposited On: 08 Nov 2017 09:26
    Refereed?: Yes
    Published?: Published
    Last Modified: 21 Sep 2018 01:11
    Identification Number:
    URI: http://eprints.lancs.ac.uk/id/eprint/88345

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